unisonic technologies co., ltd UF600 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-502-a20.b a, 600v, n-channel power mosfet ? description the utc UF600 is an n-channel power mosfet, it uses utc?s advanced technology to provide the customers with high switching speed and high breakdown voltage, etc. ? features * r ds(on) <1.2k ? @v gs =0v, i d =3ma r ds(on) <1.8k ? @v gs =10v, i d =16ma * high switching speed * high breakdown voltage ? ordering information ordering number package pin assignment packing 1 2 3 UF600g-ae2-r sot-23-3 s g d tape reel note: pin assignment: g: gate d: drain s: source ? marking
UF600 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-502-a20.b ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 20 v drain current continuous i d 0.185 a pulsed i dm 0.740 a power dissipation p d 0.50 w junction temperature t j +150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =-5v 600 v drain-source leakage current i dss v ds =480v 90 na v ds =540v 90 na gate-source leakage current forward i gss v gs =+20v, v ds =0v +90 na reverse v gs =-20v, v ds =0v -90 na on characteristics gate threshold voltage v gs ( th ) v ds =3v, i d =8 a -2.7 -1.5 v static drain-source on-state resistance r ds(on) v gs =0v, i d =3ma 0.05 0.9 1.2 k ? v gs =10v, i d =16ma 0.05 1.4 1.8 k ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 10 pf output capacitance c oss 30 pf reverse transfer capacitance c rss 5 pf switching parameters total gate charge q g v gs =-5~5v, v ds =25v, f=1.0mhz 1.29 nc gate to source charge q gs 0.1 nc gate to drain charge q gd 0.47 nc turn-on delay time t d ( on ) v dd =30v, i d =5ma, r g =25 ? , v gs =-5~5v 30 ns rise time t r 55 ns turn-off delay time t d ( off ) 80 ns fall-time t f 265 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i sd =3ma 1.38 v i sd =16ma 4.58 v
UF600 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-502-a20.b ? typical characteristics drain current, i d (a) drain current, i d (a) drain-source on-state resistance characteristics drain current, i d (ma) drain to source voltage, v ds (v) 0 2 5 0 0.5 1 1.5 2 v gs =0v, i d =3ma 1 3 4 3 2.5 drain-source on-state resistance characteristics drain current, i d (ma) drain to source voltage, v ds (v) 0 8 20 05 101520 v gs =10v, i d =16ma 4 12 16 30 25
UF600 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-502-a20.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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